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GT40G121 - Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40G121_1246393.PDF Datasheet

 
Part No. GT40G121
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

File Size 139.45K  /  5 Page  

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TOSHIBA[Toshiba Semiconductor]



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Part: GT40Q321
Maker: TOSHIBA(东芝)
Pack: TO-3P
Stock: 198
Unit price for :
    50: $2.51
  100: $2.39
1000: $2.26

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